| dc.contributor.author | Çörekçi, S. | |
| dc.contributor.author | Öztürk, M. K. | |
| dc.contributor.author | Çakmak, M. | |
| dc.contributor.author | Özçelik, S. | |
| dc.contributor.author | Özbay, E. | |
| dc.date.accessioned | 2021-12-12T17:00:39Z | |
| dc.date.available | 2021-12-12T17:00:39Z | |
| dc.date.issued | 2012 | |
| dc.identifier.issn | 1369-8001 | |
| dc.identifier.uri | https://doi.org/10.1016/j.mssp.2011.06.003 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.11857/2804 | |
| dc.description.abstract | Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface morphology of AlN layers by high-resolution X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Lower NH3 flow rate improves crystallinity of the symmetric (0 0 0 2) plane in AlN layers. Ammonia flow rate is also correlated with surface quality; pit-free and smooth AlN surfaces have been obtained at a flow rate of 70 standard cm(3) per minute. Thicker AlN films improve the crystallinity of the asymmetric (1 0 1 (1) over bar 2) plane. (c) 2011 Elsevier Ltd. All rights reserved. | en_US |
| dc.description.sponsorship | Turkish State Planning Organization [2011K120290]; Scientific and Technological Research Council of TurkeyTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK); Turkish Academy of SciencesTurkish Academy of Sciences | en_US |
| dc.description.sponsorship | This work has been supported by the Turkish State Planning Organization, project number 2011K120290, and the Scientific and Technological Research Council of Turkey. One of the authors (E. O.) also acknowledges partial support from the Turkish Academy of Sciences. | en_US |
| dc.language.iso | eng | en_US |
| dc.publisher | Elsevier Sci Ltd | en_US |
| dc.relation.ispartof | Materials Science In Semiconductor Processing | en_US |
| dc.identifier.doi | 10.1016/j.mssp.2011.06.003 | |
| dc.rights | info:eu-repo/semantics/openAccess | en_US |
| dc.subject | AlN thin films | en_US |
| dc.subject | Ammonia flow rate | en_US |
| dc.title | The influence of thickness and ammonia flow rate on the properties of AlN layers | en_US |
| dc.type | article | |
| dc.authorid | Ozcelik, Suleyman/0000-0002-3761-3711 | |
| dc.authorid | cakmak, Mehmet/0000-0003-1727-8634 | |
| dc.department | Fakülteler, Fen-Edebiyat Fakültesi, Fizik Bölümü | |
| dc.identifier.volume | 15 | en_US |
| dc.identifier.startpage | 32 | en_US |
| dc.identifier.issue | 1 | en_US |
| dc.identifier.endpage | 36 | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.identifier.wos | WOS:000305111900008 | en_US |
| dc.authorwosid | Ozbay, Ekmel/B-9495-2008 | |
| dc.authorwosid | Ozcelik, Suleyman/J-6494-2014 | |
