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Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties
(Inderscience Enterprises Ltd, 2019)
Substrate surface plays an important role to achieve high performance infrared devices and high-quality film layers. GaAs (211)B wafers were intensively used in infrared detector applications. Despite 'epiready' wafers can ...
Size investigation of silicon nanoclusters deposited on HOPG using noncontact atomic force microscopy
(Scientific Technical Research Council Turkey-Tubitak, 2018)
The sizes of silicon nanoparticles produced using two different novel methods are investigated in this report. The method of production used to generate silicon oxide nanoparticles was achieved via gas aggregation codeposition ...