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Toplam kayıt 3, listelenen: 1-3
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
(Pleiades Publishing Inc, 2013)
Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
(Springer, 2011)
An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
(Springer, 2014)
The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray ...