Ara
Toplam kayıt 4, listelenen: 1-4
Structural and optoelectronic characterization of Cu 2 CoSnS 4 quaternary functional photodetectors
(Elsevier Gmbh, 2020)
[Abstract Not Available]
INFRARED DETECTING BEHAVIOURS OF Cu2NiSnS4 PHOTODIODES
(Kırklareli Üniversitesi, 2020)
A photodetector in Al/p-Si/Cu2NiSnS4/Al form was produced using sol-gel method. Scanning electron microscopy (SEM) was used in the structural assessment of the photodetectors. Microscopic investigations showed that Cu2NiSnS4 ...
Optical, Electrical and Photoresponsive Properties of Cu2NiSnS4 Solar Detectors
(Springer, 2020)
Sol-gel methods were used to fabricate Al/p-Si/Cu2NiSnS4/Al quaternary functional solar detectors. Diffraction, spectroscopy and microscopy were used for the structural characterization of the photodetectors. The bandgap ...
Cd dopant effect on structural and optoelectronic properties of TiO2 solar detectors
(Springer, 2021)
Al/n-Si/Ti1-xO2CdxO/Al photodiodes were produced using sol-gel and spin coating methods where CdO dopant was applied on different concentrations (x = 0.0; x = 0.01; x = 0.05; x = 0.10). Cd dopant effect upon structural, ...