Ara
Toplam kayıt 97, listelenen: 31-40
AFM induced self-assembling and self-healing mechanism of silicon oxide nanoparticle linear array domains templated on Moire superlattice patterns on HOPG
(Elsevier Science Bv, 2019)
Silicon oxide nanocluster suspensions were drop-cast on highly oriented pyrolytic graphite (HOPG) and investigated using ultra-high vacuum non-contact atomic force microscopy (AFM). The assembly of silicon oxide nanoparticle ...
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
(Pleiades Publishing Inc, 2011)
The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ...
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
(Elsevier Science Bv, 2018)
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ...
Analytical solution of the local fractional Klein-Gordon equation for generalized Hulthen potential
(Scientific Technical Research Council Turkey-Tubitak, 2017)
The one-dimensional Klein Gordon (KG) equation is investigated in the domain of conformable fractional calculus for one-dimensional scalar potential, namely generalized Hulthen potential. The conformable fractional calculus ...
Intriguing of two-dimensional Janus surface-functionalized MXenes: An ab initio calculation
(Elsevier, 2020)
MXenes, two-dimensional (2D) transition metal carbides and nitrides displaying astonishing properties are emerged as a new class of two-dimensional (2D) layered materials. Motivated by the recent successful synthesis of ...
Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
(Natl Inst Optoelectronics, 2012)
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented ...
İki Bileşenli Metal Oksit Yarı iletkenlerin Üretilmesi ve Optik Özelliklerinin Belirlenmesi
(2020)
Bu çalışmada; Metal oksit bir malzeme olan TiO2’in yapısal ve optiksel özelliklerinin incelenmesi iki aşamadagerçekleştirilmiştir. Çalışmanın ilk aşamasında Sol-jel metodu kullanılarak katkısız ve demir (Fe) katkılı TiO2 ...
Does Glp-2 have a protective effect on cerebral ischemia/reperfusion model?
(Tubitak Scientific & Technical Research Council Turkey, 2015)
Background/aim: To investigate the neuroprotective effects of glucagon-like peptide 2 (Glp-2), which increases cerebral blood flow, on the hippocampal complex after cerebral ischemia/reperfusion (I/R) injury in rats. ...
Control of C3N4 and C4N3 carbon nitride nanosheets' electronic and magnetic properties through embedded atoms
(Royal Soc Chemistry, 2020)
In the present work, the effect of various embedded atom impurities on tuning electronic and magnetic properties of C3N4 and C4N3 nanosheets have been studied using first-principles calculations. Our calculations show that ...
Investigation of dielectric properties of Ag-doped ZnO thin films
(Elsevier, 2020)
In this study, undoped and Ag-doped ZnO thin films were grown on p-type Si substrates using Sol-Gel spin coating technique at room temperature. Optical properties, such as refractive index (n) and extinction coefficient ...