Ara
Toplam kayıt 104, listelenen: 31-40
Levels of Po-210 and Pb-210 in mussel and sediments in Candarli Gulf and the related dose assessment to the coastal population
(Pergamon-Elsevier Science Ltd, 2013)
Po-210 and Pb-210 in mussel (Mytilus galloprovincialis) and sediment samples collected at Candarli Gulf during the period of 2010-2012 are presented and discussed. The activity concentrations of Po-210 and Pb-210 were ...
New predicted two-dimensional MXenes and their structural, electronic and lattice dynamical properties
(Pergamon-Elsevier Science Ltd, 2019)
MXenes, transition metal carbides and nitrides, are a bourgeoning class of two-dimensional (2D) materials due to their tunable electronic and magnetic structures, rich surface chemistry and thermal stability. Here, we ...
Facile preparation of commercial Bi2O3 nanoparticle decorated activated carbon for pseudocapacitive supercapacitor applications
(Springer, 2021)
In this work, a facile method to prepare Bi2O3 decorated activated carbon (Bi2O3@AC) composites with high pseudocapacitive properties was presented. The inorganic-organic composites synthesized using commercial Bi2O3 and ...
Analytical eigenstate solutions of Schrodinger equation with noncentral generalized oscillator potential by extended Nikiforov-Uvarov method
(Elsevier, 2021)
Exact eigenstate solutions of Schrodinger equation for a generalized oscillator system that includes, as special cases; ring shaped oscillator potential and isotropic harmonic oscillator potential are examined in an ...
AFM induced self-assembling and self-healing mechanism of silicon oxide nanoparticle linear array domains templated on Moire superlattice patterns on HOPG
(Elsevier Science Bv, 2019)
Silicon oxide nanocluster suspensions were drop-cast on highly oriented pyrolytic graphite (HOPG) and investigated using ultra-high vacuum non-contact atomic force microscopy (AFM). The assembly of silicon oxide nanoparticle ...
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
(Pleiades Publishing Inc, 2011)
The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ...
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
(Elsevier Science Bv, 2018)
Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ...
Analytical solution of the local fractional Klein-Gordon equation for generalized Hulthen potential
(Scientific Technical Research Council Turkey-Tubitak, 2017)
The one-dimensional Klein Gordon (KG) equation is investigated in the domain of conformable fractional calculus for one-dimensional scalar potential, namely generalized Hulthen potential. The conformable fractional calculus ...
Intriguing of two-dimensional Janus surface-functionalized MXenes: An ab initio calculation
(Elsevier, 2020)
MXenes, two-dimensional (2D) transition metal carbides and nitrides displaying astonishing properties are emerged as a new class of two-dimensional (2D) layered materials. Motivated by the recent successful synthesis of ...
Current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes
(Natl Inst Optoelectronics, 2012)
In this study, the forward and reverse bias current-voltage (I-V) characteristics of Au/InGaAs/n-GaAs Schottky barrier diodes (SBDs) have been investigated at room temperature. InGaAs epilayer was grown on (100) oriented ...