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Toplam kayıt 8, listelenen: 1-8
Effects of Thermal Annealing and Film Thickness on the Structural and Morphological Properties of Titanium Dioxide Films
(Polish Acad Sciences Inst Physics, 2012)
Titanium dioxide (TiO2) thin films having different thicknesses of 220, 260, and 300 nm were deposited onto well-cleaned n-type silicon substrates by reactive DC magnetron sputtering and annealed in the range of 200-1000 ...
The influence of thickness and ammonia flow rate on the properties of AlN layers
(Elsevier Sci Ltd, 2012)
Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface ...
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
(Pleiades Publishing Inc, 2013)
Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ...
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
(Springer, 2011)
An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ...
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
(Pleiades Publishing Inc, 2011)
The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ...
Structural investigation and electronic band transitions of nanostructured TiO2 thin films
(Wiley-V C H Verlag Gmbh, 2011)
Titanium dioxide (TiO2) thin film was deposited on n-Si (100) substrate by reactive DC magnetron sputtering system at 250 degrees C temperature. The deposited film was thermally treated for 3 h in the range of 400-1000 ...
Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
(Springer, 2016)
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ...
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
(Springer, 2014)
The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray ...