Konu "Threading Dislocations" için Araştırma Çıktıları | WoS | Scopus | TR-Dizin | PubMed listeleme
Toplam kayıt 2, listelenen: 1-2
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Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
(Pleiades Publishing Inc, 2013)Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ... -
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
(Springer, 2014)The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray ...