Yazar "Koç, Mümin Mehmet" için Araştırma Çıktıları | WoS | Scopus | TR-Dizin | PubMed listeleme
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Structural, electrical and optical characterization of Mn doped CdO photodiodes
Duğan, Selin; Koç, Mümin Mehmet; Coşkun, Burhan (Elsevier, 2020)Undoped CdO, 0.2% Mn doped CdO, 6% Mn doped CdO and 10% Mn doped CdO photodiodes were prepared using sol-gel method and deposited on Si substrate at room temperature. Electrical and optical properties of the diodes were ... -
Structural, electrochemical and optical properties of hydrothermally synthesized transition metal oxide (Co3O4, NiO, CuO) nanoflowers
Yetim, Nurdan Kurnaz; Aslan, Naim; Sarioğlu, Akın; Sarı, Nursen; Koç, Mümin Mehmet (Springer, 2020)In this work, structural, electrochemical and optical properties of the flower-like Co3O4, NiO and CuO nanostructures were investigated. Co3O4, NiO and CuO nanoflowers were prepared using hydrothermal method. Fourier ... -
Synthesis and characterization of Au and Bi2O3 decorated Fe3O4@PAMAM dendrimer nanocomposites for medical applications
Kurnaz Yetim, Nurdan; Kursun Baysak, Fatma; Koç, Mümin Mehmet; Nartop, Dilek (Springer Heidelberg, 2021)Fe3O4 magnetic nanoparticles were produced and covered with TEOS and APTES which were known to reduce the toxic properties of nanoparticles. Nanoparticles were functionalized second-generation PAMAM dendrimers and doped ... -
Ti doped amorphous carbon (Al/Ti-a:C/p-Si/Al) photodiodes for optoelectronic applications
Aslan, Naim; Koç, Mümin Mehmet; Dere, Ayşegül; Arif, Bilal; Erkovan, Mustafa; Al-Sehemi, Abdullah G.; Yakuphanoğlu, Fahrettin (Elsevier Science Bv, 2018)Electrochemical deposition technique was used to fabricate titanium doped amorphous carbon (Ti doped a:C) Al/Ti-a:C/p-Si/Al photodiode. The effects of illumination on the current voltage (I-V) characteristics of the ... -
Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties
Özden, Selin; Koç, Mümin Mehmet (Inderscience Enterprises Ltd, 2019)Substrate surface plays an important role to achieve high performance infrared devices and high-quality film layers. GaAs (211)B wafers were intensively used in infrared detector applications. Despite 'epiready' wafers can ...