Yazar "Öztürk, M. K." için listeleme
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Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
Çörekçi, S.; Duğan, S.; Öztürk, M. K.; Çetin, S. S.; Çakmak, M.; Özçelik, S.; Özbay, E. (Springer, 2016)Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force ... -
Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD
Çörekçi, S.; Öztürk, M. K.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. (Springer, 2011)An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of ... -
Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs
Çörekçi, S.; Öztürk, M. K.; Yu, Hongbo; Çakmak, M.; Özçelik, S.; Özbay, E. (Pleiades Publishing Inc, 2013)Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The ... -
Effects of Thermal Annealing and Film Thickness on the Structural and Morphological Properties of Titanium Dioxide Films
Çörekçi, S.; Kızılkaya, K.; Asar, T.; Öztürk, M. K.; Çakmak, M.; Özçelik, S. (Polish Acad Sciences Inst Physics, 2012)Titanium dioxide (TiO2) thin films having different thicknesses of 220, 260, and 300 nm were deposited onto well-cleaned n-type silicon substrates by reactive DC magnetron sputtering and annealed in the range of 200-1000 ... -
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
Altuntas, H.; Altındal, S.; Çörekçi, S.; Öztürk, M. K.; Özçelik, S. (Pleiades Publishing Inc, 2011)The aim of this study, to explain effects of the SiO2 insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 ) and thick (250 ) SiO2 insulator layers were deposited on ... -
The influence of thickness and ammonia flow rate on the properties of AlN layers
Çörekçi, S.; Öztürk, M. K.; Çakmak, M.; Özçelik, S.; Özbay, E. (Elsevier Sci Ltd, 2012)Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface ... -
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Çetin, S. S.; Özçelik, S.; Özbay, E. (Springer, 2014)The structural and morphological properties of metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN light-emitting diode (LED) structures with different In content have been studied by high-resolution X-ray ... -
Structural investigation of AlInN/AlN/GaN heterostructures
Tamer, M.; Öztürk, M. K.; Çörekçi, S.; Baş, Y.; Gültekin, A.; Kurtuluş, G.; Özbay, E. (Springer, 2016)AlInN/AlN/GaN high-electron-mobility transistor (HEMT) structures were grown on undoped-GaN-layers/sapphire templates by metal-organic chemical vapor deposition to investigate the properties of HEMTs with various thickness ...
